PART |
Description |
Maker |
HMC799LP3E |
DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
|
Hittite Microwave Corporation
|
HMC799LP3E10 |
DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|
PEMD48 PEMD48_2 |
NPN/PNP resistor-equipped transistors; R1 R2 = 47 kohm 47 kohm and 2.2 kohm 47 kohm NPN/PNP resistor-equipped transistors; R1, R2 = 47 kohm, 47 kohm and 2.2 kohm, 47 kohm From old datasheet system
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
SKY65119 SKY65119-21 |
700 - 800 MHz Linear Power Amplifier 700 MHz - 800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Skyworks Solutions, Inc. Skyworks Solutions Inc.
|
MA4EX900L-1226T MA4EX900L-1226 |
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9 dB CONVERSION LOSS-MAX Silicon Double Balanced HMIC Mixer, 700 - 1000 MHz
|
MACOM[Tyco Electronics]
|
BCR164 BCR164F BCR164L3 BCR164T BCR164FE6327 BCR16 |
Digital Transistors - R1=4,7 kOhm R2=10 kOhm Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhm PNP Silicon Digital Transistor
|
Infineon Technologies AG
|
BCR196L3 BCR196W BCR196 BCR196F BCR196T BCR196TE63 |
Digital Transistors - R1= 47 kOhm ; R2= 22 kOhm Digital Transistors - R1=47 kOhm R2=22 kOhm PNP Silicon Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
PDTA144VU |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm PNP配电阻型晶体管;R1=47千欧姆,R2=10千欧
|
NXP Semiconductors N.V.
|
PDTA123J PDTA123JK PDTA123JM PDTA123JU PDTA123JS |
PDTA123J series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm
|
Philips
|
PEMD18 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
|
Philips
|
PEMD15 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm
|
Philips
|